@prefix sampledescriptionvocabulary1: <https://purls.helmholtz-metadaten.de/skosmos/sdv/> .
@prefix skos: <http://www.w3.org/2004/02/skos/core#> .
@prefix ns0: <http://server/unset-base/> .

sampledescriptionvocabulary1:ReactiveIonEtching
  skos:prefLabel "Reactive ion etching" ;
  skos:definition """1. RIE is like sputtering in the argon chamber, but the polarity is reversed and different gas mixtures are used. The atoms on the surface of the wafer fly away, leaving it bare. (Britannica). 
2. Reactive-ion etching (RIE) is an etching technology used in microfabrication. RIE is a type of dry etching which has different characteristics than wet etching. RIE uses chemically reactive plasma to remove material deposited on wafers. The plasma is generated under low pressure (vacuum) by an electromagnetic field. High-energy ions from the plasma attack the wafer surface and react with it.(Wikipedia)"""^^ns0:None ;
  skos:broader sampledescriptionvocabulary1:Etching ;
  a skos:Concept .

sampledescriptionvocabulary1:Etching
  skos:prefLabel "Etching" ;
  a skos:Concept ;
  skos:narrower sampledescriptionvocabulary1:ReactiveIonEtching .