Electron beam lithography
definition: 1. A synthesis technique that uses electrons to transfer a pattern to a substrate. The substrate is coated with a film (or 'resist) and a beam of electrons (10–20 keV) is scanned across it in a patterned fashion. The electrons induce chemical reactions in the resist and the desired pattern is obtained by selectively removing either exposed or non-exposed regions of the resist ('developing'). The electron beam can be focused using either electric or magnetic fields. (TIB, Chemical Methods Ontology). 2. Scanning beam techniques such as electron-beam lithography provide patterns down to about 20 nanometres. Here the pattern is written by sweeping a finely focused electron beam across the surface. Focused ion beams are also used for direct processing and patterning of wafers, although with somewhat less resolution than in electron-beam (Brittanica). 3. Electron-beam lithography (often abbreviated as e-beam lithography or EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing) (Wikipedia). 4. Electron beam lithography (EBL) is a specialized technique for creating the extremely fine patterns (much smaller than can be seen by the naked eye) required by the modern electronics industry for integrated circuits (Technical University Dresden).
broader: Lithography
type: Concept

Lithography
type: Concept
narrower: Electron beam lithography