1. A synthesis technique that uses electrons to transfer a pattern to a substrate. The substrate is coated with a film (or 'resist) and a beam of electrons (10–20 keV) is scanned across it in a patterned fashion. The electrons induce chemical reactions in the resist and the desired pattern is obtained by selectively removing either exposed or non-exposed regions of the resist ('developing'). The electron beam can be focused using either electric or magnetic fields. (TIB, Chemical Methods Ontology). 2. Scanning beam techniques such as electron-beam lithography provide patterns down to about 20 nanometres. Here the pattern is written by sweeping a finely focused electron beam across the surface. Focused ion beams are also used for direct processing and patterning of wafers, although with somewhat less resolution than in electron-beam (Brittanica). 3. Electron-beam lithography (often abbreviated as e-beam lithography or EBL) is the practice of scanning a focused beam of electrons to draw custom shapes on a surface covered with an electron-sensitive film called a resist (exposing) (Wikipedia). 4. Electron beam lithography (EBL) is a specialized technique for creating the extremely fine patterns (much smaller than can be seen by the naked eye) required by the modern electronics industry for integrated circuits (Technical University Dresden).