Käsitteen tiedot
Käytettävä termi
Beam epitaxy
Määritelmä
- Find for Molecular-beam epitaxy (MBE) is an epitaxy method for thin-film deposition of single crystals. MBE is widely used in the manufacture of semiconductor devices, including transistors, and it is considered one of the fundamental tools for the development of nanotechnologies. (Wikipedia)
Yläkäsite
URI
https://purls.helmholtz-metadaten.de/evoks/sdv/beamEpitaxy
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