Käsitteen tiedot
Käytettävä termi
Anitsite defect
Määritelmä
- 1. Antisite defects, in the context of SiC crystals, refer to the formation of defects where atoms of one type occupy the lattice site of the other type. In SiC, both silicon (Si) and carbon (C) atoms can become antisite defects. (ScienceDirect, AI generated definition based on: Wide-Band-Gap Semiconductors, 1993)
Yläkäsite
URI
https://purls.helmholtz-metadaten.de/evoks/sdv/AnitsiteDefect
{{label}}
{{#each values }} {{! loop through ConceptPropertyValue objects }}
{{#if prefLabel }}
{{/if}}
{{/each}}
{{#if notation }}{{ notation }} {{/if}}{{ prefLabel }}
{{#ifDifferentLabelLang lang }} ({{ lang }}){{/ifDifferentLabelLang}}
{{#if vocabName }}
{{ vocabName }}
{{/if}}